学术
摘 要:
通过等离子体与Cu膜表面的分步反应合成了厚约4nm的CuSiN自对准层．采用高分辨透射电子显微术（HRTEM）、纳米电子束探针能谱（EDS）和X射线衍射（XRD）表征CuSiN和Si／SiO2／TaN／Ta／Cu（CuSiN）／SiC：H／SiOC：H多层膜基体系的微结构和热稳定性．表明CuSiN层两侧分别出现SiN和Cu（Si）层，显著提高Cu／SiC：H／SiOC：H结构的热稳定性，其机制是在500℃退火温度条件下CuSiN层仍能够稳定存在，从而阻碍了Cu原子向SiC：H／SiOC：H介质薄膜体内的扩散．[著者文摘]
文章出处:
《金属学报》-2007年43卷11期 -1145-1148页
文献标识码:
A
文章编号:
0412-1961（2007）11-1145-04
MICROSTRUCTURE AND THERMAL STABILITY OF CuSiN SELF-ALIGNED LAYER IN ADVANCED COPPER INTERCONNECT MULTILAYER FILMS
LIU Bo, TANG Wenjin, SONG Zhongxiao, XU Kewei（ State key Laboratory for Mechanical Behavior of Materials, Xi＇an Jiaotong University, Xi＇an 710049 ）
Abstract:
A CuSiN self-aligned layer with 4 nm in thickness was synthesized by a step-reaction between plasma and Cu film surface in RF-plasma-enhanced chemical vapor deposition system. The microstructure of Si/SiO2/TaN/Ta/Cu（CuSiN）/SiC ： H/SiOC ： H multi-layer stacks was investi- gated by using HRTEM, EDS and XRD. The results indicate that SiN and Cu（Si） layers appeared in bothsides of CuSiN layer, and the thermal stability of the interface of Cu/SiC ： H dielectric barriers can be improved by introducing CuSiN self-aligned layer which suppressed copper atom or vacancy diffusion into SiC ： H/SiOC ： H dielectric film along the interface.[著者文摘]
Key words:
copper interconnect, self-aligned CuSiN, thermal stability, dielectric barrier
基金资助:
国家重点基础研究发展计划项目2004CB619302和国家自然科学基金项目50531060资助
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