学术
In1-xGa x N／Si异质结太阳能电池的光伏特性研究
董少光[1,2] 范广涵[1]
[1]华南师范大学光电子材料与技术研究所,广东广州510631 [2]佛山科学技术学院光电子与物理学系,广东佛山528000
摘 要:
通过器件模拟对n—In1-x Gax N／p—Si异质结的光伏特性进行了研究，并与c—Si同质结薄膜电池的性能作了比较。在AM1．5的光照条件下，n—IGN／p—Si异质结在最佳的电池设计、最佳的材料和最佳的操作参数条件下获得的电池效率达到了27％。电池效率受到薄膜质量的强烈影响，从电子亲和势、多数载流子的迁移率、少数载流子的寿命、薄膜厚度以及掺杂水平的变化可以得到说明。[著者文摘]
文章出处:
《西南科技大学学报》-2007年22卷4期 -20-24页
栏目信息:
文献标识码:
A
文章编号:
1671-8755（2007）04-0020-05
Photovoltaic Properties Reseach of In1-x Ga xN/Si Hetero-junction Solar Cells
DONG Shao-guang, FAN Guang-han （ 1. Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, Guangdong , China ; 2. Department of Optoelectronic and Physics, Foshan University, Foshan 528000, Guangdong , China）
Abstract:
Photovoltaic properties of n--In1-xGaxN/p--Si hetero-junction were studied by device simulation, and were compared with the performance of c - Si homo-junction thin film cells. Best achievable cell efficiency under AM1.5 illumination conditions were 27% for n-IGN/p--Si hetero-junction, on the condition of optimum cell design, materials and operation parameters. The cell efficiency is strongly affected by film quality, which is proved by variation of electron affinity, majority carrier mobility, minority cartier lifetime, film thickness and doping levels.[著者文摘]
Key words:
Solar ceils ; InGaN ; Photovohaic properties ; Photoluminescence
基金资助:
广州市LED工业研究开发基地、香港健隆投资有限公司研发项目.
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