学术
自旋阀多层膜巨磁电阻的研制
温殿忠[1,2]
[1]黑龙江大学集成电路重点实验室,哈尔滨150080 [2]黑龙江大学电子工程黑龙江省高校重点实验室,哈尔滨150080
摘 要:
阐述了多层膜巨磁电阻自旋阀的设计原理和采用金属掩膜版磁控溅射的方法研制多层膜巨磁电阻自旋阀的工艺．制造的多层膜巨磁电阻采用[Co／Cu／Co]三重结构．同时分析了制备的Cu、Co纳米膜的形貌以及利用自旋阀GMR传感器测试得到的实验校准数据并绘制出输出-输入曲线．实验结果表明，制造的巨磁电阻提高了低场下的磁灵敏度，可以用来检测不同方位地磁场的大小，用该方法制造巨磁电阻的迟滞为0．01%F．S．文中介绍的多层膜巨磁电阻制造方法具有工艺简单、可与IC工艺相兼容的优点，有推广应用前景．[著者文摘]
文章出处:
《传感技术学报》-2006年19卷05B期,2056 -2050-2053,2056页
栏目信息:
文献标识码:
A
文章编号:
1004-1699（2006）05-2050-04
Research Fabrication of Spinning Valve Multilayer Membrane GMR
WEN Dian-zhong （1 Major Laboratories of Integrated Circuits, Heilongjiang University, Harbin 150080, China; 2 HLJ Province Key Laboratories of senior-education for Electronic Engineering, Heilongjiang University, Harbin 150080, China）
Abstract:
This paper expatiates on the fabrication of the Spinning Valve based on the multilayer membrane Giant Magnetoresistance （GMR） theory, which involving the metal mask and the R. F magnetron sputtering technology in the process. The [Co/Cu/Co structure features largely in the GMR we manufactured. We provide the SEM photos showing the surface structure of the samples, and also the testing data plot of that GMR sensor. The experimental results indicate that the GMR possessing relatively high magnetism sensitivity can be used even to measure the change of the geomagnetism. The positive and negative trip measuring error is 0.01%F.S for that GMR. The technology focused for the fabrication of GMR is simple and convenient, especially goes well with the ICs technology. It can be used widely in variety of application aspects.[著者文摘]
Key words:
Cu/Co nanometer membrane; SEM; GMR; metal mask technology; R.F sputtering;
基金资助:
电子工程黑龙江省高校重点实验室、黑龙江大学集成电路重点实验室基金项目资助
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