摘 要:
Cubic Mg0.55Zn0.45O thin film alloys have been deposited on Si substrates at low growth temperature. Thetopography of the cross section of the epitaxial film by scanning electronic microscope demonstrates good mor-phology and high interracial quality. The high (001) orientation and wide band-gap (E9 ＞ 5.5 eV) of the cubicMg0.55Zn0.45O thin films accord with the guidelines for metal-insulator-silicon (MIS) device applications. Usingthe cubic ternary thin films as insulators, MIS structures have been fabricated. The capacitance-voltage mea-surements show the fiat band voltage shift VFB of 11.8 V and mobile ion density Dmc of 5.57 × 10^10 cm^-2 for theMIS structure. Leakage current density as low as ∽ 10^-7 A/cm^2 is obtained at E = 700 kV/cm by the current-voltage measurements. These unique structural and electrical properties of the fabricated MIS devices indicatethat cubic MgZnO materials could become a new candidate for high-κ dielectrics used in silicon integrated circuittechnologies. (共4页)
