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Applications of Cubic MgZnO Thin Films in Metal-Insulator-Silicon Structures
LIANGJun WUHui-Zhen LAOYan-Feng QIUDong-Jiang CHENNai-Bo XUTian-Ning StateKeyLaboratoryofFunctionalMaterialsforInformatics ShanghaiInstituteofMicrosystemandInformationTechnology ChineseAcademyofSciences Shanghai200050 DepartmentofPhysics ZhejiangUniversity Hangzhou310027
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摘要：Cubic Mg0.55Zn0.45O thin film alloys have been deposited on Si substrates at low growth temperature. Thetopography of the cross section of the epitaxial film by scanning electronic microscope demonstrates good mor-phology and high interracial quality. The high (001) orientation and wide band-gap (E9 ＞ 5.5 eV) of the cubicMg0.55Zn0.45O thin films accord with the guidelines for metal-insulator-silicon (MIS) device applications. Usingthe cubic ternary thin films as insulators, MIS structures have been fabricated. The capacitance-voltage mea-surements show the fiat band voltage shift VFB of 11.8 V and mobile ion density Dmc of 5.57 × 10^10 cm^-2 for theMIS structure. Leakage current density as low as ∽ 10^-7 A/cm^2 is obtained at E = 700 kV/cm by the current-voltage measurements. These unique structural and electrical properties of the fabricated MIS devices indicatethat cubic MgZnO materials could become a new candidate for high-κ dielectrics used in silicon integrated circuittechnologies. | |
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| 格式：PDF 页数：4 页 页码范围：1135-1138页 | ||
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| 关 键 词：立方体镁锌氧薄膜合金 金属绝缘硅结构 扫描电子显微镜观测 金属-氧化物-半导体集成电路 | ||
| 来源期刊：《中国物理快报：英文版》2004年 第6期 | ||
| 收录数据库：中文科技期刊数据库 | ||
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