学术
摘 要:
利用等离子增强化学气相沉积（PECVD）技术，研究了H稀释度D=H2／（H2＋Sill。）对在玻璃和不锈钢衬底上低温制备微晶硅薄膜的晶化率、晶粒尺寸、薄膜质量等的影响。结果表明，随着硅烷浓度的降低，样品的晶化率、晶粒尺寸有所改变。当D=99％时，晶粒突然变大，晶化率显著提高。因此，我们认为此时的硅薄膜由非晶硅转化为微晶硅。[著者文摘]
文章出处:
《可再生能源》-2006年4期 -18-20页
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
1671-5292（2006）04-0018-03
Influence of H2 dilution on microcry stalline silicon thin film prepared by PECVD
WANG Sheng-zhao,LU Jing-xiao,WANG Hong-juan,LIU Ping,CHEN Yong-sheng,ZHANG Li-wei,YANG Shi-e,GAO Xiao-yong（Key Laboratory of Material Physics Ministry of Education, P, R, C.Department of physics and engineering of Zhengzhou University, Zhengzhou 450052, China）
Abstract:
By PECVD deposition technology, we mainly investigated the influence of hydrogen dilution on glass/steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at 300 ℃.We study the crystallization ratio, grain size of the Silicon thin film specially. The results reveal that the crystallization ratio ,grain size of the Silicon thin film changed along with D, which changed sharply when the D=99%.On this We think the Si thin film changed from a-Si into u-Si.[著者文摘]
Key words:
plasma enhanced chemical vapor deposition （PECVD）; H2 dilution; microcrystalline silicon
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