学术
IDT6116单粒子敏感性评估试验技术研究
薛玉雄[1] 曹洲[1] 杨世宇[1] 田恺[1] 郭刚[2] 刘建成[2]
[1]兰州物理研究所真空低温技术与物理国防科技重点实验室,甘肃兰州730000 [2]中国原子能科学研究院核物理研究所,北京102413
摘 要:
为评估IDT6116 SRAM单粒子敏感性,采用地面试验方法和地面试验系统,利用脉冲激光、重离子和^252Cf源3种不同的地面模拟源,对IDT6116 SRAM器件进行单粒子敏感性试验研究,并对3种不同的模拟源的试验结果进行等效性分析比较,同时进行总剂量效应对单粒子效应影响的试验研究。研究结果表明：IDT6116 SRAM抗单粒子翻转和锁定的能力较强;接受一定辐照剂量后的试验样品对单粒子翻转更加敏感,且翻转阈值略有降低,翻转截面略有增大。[著者文摘]
文章出处:
《原子能科学技术》-2008年42卷1期 -22-27页
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
1000-6931（2008）01-0022-06
Study on IDT6116 Single-Event Effect Sensitivity Evaluation Testing Technology
XUE Yu-xiong,CAO Zhou,YANG Shi-yu,TIAN Kai,GUO Gang,LIU Jian-cheng（1.National Laboratory of Vacuum ＆ Cryogenics Technology and Physics,Lanzhou Institute of Physics,Lanzhou 730000,China;2.Department of Nuclear Physics,China Institute of Atomic Energy,Beijing 102413,China）
Abstract:
Using single-event effect（SEE） sensitivity evaluation test method and test system as well as three kinds of simulation sources（pulsed laser,heavy ion and ^252Cf）,the SEE sensitivity of IDT6116 SRAM was experimentally researched.A comparison of testing results＇ equivalent for three kinds of simulation sources was performed.In addition,the influence of total dose effects on SEE was also researched.It is seem that occurred single-event upset probability is very little and the resistence to SEE is better for IDT6116 SRAM.[著者文摘]
Key words:
IDT6116 SRAM;single-event upset;single-event latch-up;pulsed laser;heavy ion;^252Cf source
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