摘 要:
The transition to 65 nm beyond and 300 mm wafers posed many challenges on etch depth and critical dimension (CD) uniformity within wafer. In this paper, we introduce a radical distribution control (RDC) system for an excellent uniformity control.Etch depth and CD uniformity within wafer are well controlled by adding RDC function to SCCMTM. For increasing productivity, an all-in-one process, that is, etch/ash at the same chamber continuously is proposed here. By utilizing the advantage of independent dual frequency, a bias-controlled two-stepash “hybrid ash“ is combined in the all-in-one process. Hybrid ash uses bias control and low pressure to minimize liner loss and the damage of low-k materials, which is targeting 65nm and beyond. (共6页)
