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The advantages of radical distribution control and independent dual frequency on etch／ash
Li-HungChen BinLan TanakaHideaki] KubotaKazuhiro ShinOkamoto TokyoElectronLtd
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摘要：The transition to 65 nm beyond and 300 mm wafers posed many challenges on etch depth and critical dimension (CD) uniformity within wafer. In this paper, we introduce a radical distribution control (RDC) system for an excellent uniformity control.Etch depth and CD uniformity within wafer are well controlled by adding RDC function to SCCMTM. For increasing productivity, an all-in-one process, that is, etch/ash at the same chamber continuously is proposed here. By utilizing the advantage of independent dual frequency, a bias-controlled two-stepash "hybrid ash" is combined in the all-in-one process. Hybrid ash uses bias control and low pressure to minimize liner loss and the damage of low-k materials, which is targeting 65nm and beyond. | |
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| 格式：PDF 页数：6 页 页码范围：41-46页 | ||
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| 关 键 词：蚀刻 分布控制 独立双频 RDC SCCM | ||
| 来源期刊：《半导体技术》2004年 第8期 | ||
| 收录数据库：中文科技期刊数据库 | ||
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