学术
国际标准刊号：ISSN 1004-3365
国内统一刊号：CN 51-1279
摘 要:
Si-BJT和Si-FET集成电路在提高频率、速度上的困难，到SiGe-HBT和SiGe-FET及其集成电路的优异特性，论述了SiGe半导体在Si基微电子技术发展中的重要作用；特别强调了应变增强载流子迁移率-应变工程技术的重要作用。介绍了SiGe器件及其集成电路的发展概况。[著者文摘]
文章出处:
《微电子学》-2008年38卷1期 -34-43页
Microelectronics
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
1004-3365（2008）01-0034-10
Important Function of SiGe Semiconductor in Technology Development of Microelectronics
XIE Meng-xian,GU Ni-na（1.School ofMicroelectronicsand Solid State Electronics, Univ. Elec. Sci. and Technol. of China, Chengdu 610054, P. R. China; 2. Product Design Service Center, TSMC（Shanghai）Company Limited,Shanghai 201616, P. R. China）
Abstract:
Compared with Si-BJT and Si-FET （IC＇s）, SiGe-HBT and SiGe-FET （IC＇s） have excellent characteristics in frequency and speed improvement. Important function of SiGe semiconductor in technology development of Si-based microelectronis is reviewed. The important role of strain engineering （i. e. carrier mobility enhancement by using strain） is emphasized specifically. Moreover, the current development of SiGe devices and ICs is discussed.[著者文摘]
Key words:
BJT; HBT; SiGe-HBT; SiGe-BiCMOS; MODFET; Strain engineering; SiGe-FET
收稿日期: 2007-12-04
修订日期: 2007-12-30
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