学术
国际标准刊号：ISSN 1004-3365
国内统一刊号：CN 51-1279
摘 要:
应变硅已成为延伸摩尔定律（Moore＇s Law）的重要技术手段之一。综述了应变硅技术的发展及趋势。首先，从物理理论上分析了应变对硅沟道迁移率的影响；然后介绍了现有的各种应变硅技术；最后，分析了应变硅技术的发展趋势。[著者文摘]
文章出处:
《微电子学》-2008年38卷1期 -50-56页
Microelectronics
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
1004-3365（2008）01-0050-07
Strained Silicon -- A Technology to Extend Moore＇s Law
WANG Jing （Tsinghua National Lab. for In for. Sci. and Technol.; Inst. of Microelec. , Tsinghua Univ., Beijing 100084, P. R. China）
Abstract:
Strained silicon is an important technique to extend Moore＇s Law. In this paper, technical progress and trends of strained silicon are reviewed. Physical mechanisms responsible for mobility enhancement in strained silicon are explained, and various state-of-the-art strained silicon techniques are examined. Finally, the technological trends of strained silicon are discussed.[著者文摘]
Key words:
CMOS; Strained silicon; Enhanced mobility; Source/drain engineering; Stressed liner; Strained SOI
收稿日期: 2007-12-15
修订日期: 2007-12-31
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