学术
摘 要:
提出了一种有效的方法-采用多发射极指分段结构来增强功率SiGe HBT的热稳定性。为了对分段结构进行精确的热分析，针对器件多层结构的特点，建立起适当的热模型，模型中充分考虑了各个部分的热阻。根据此热模型，使用有限元方法，对一个十指的分段结构功率SiGe HBT进行了热模拟。考虑到模拟的精确性及软件的功能限制，采用两步模拟法：衬底模拟和有源区模拟。通过模拟，得到了发射极指的三维温度分布。结果表明，分段结构功率HBT的最高结温和热阻都明显低于完整发射极指结构，新结构有效地提高了器件的热稳定性。[著者文摘]
文章出处:
《微电子学》-2008年38卷1期,119 -81-84,119页
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
1004-3365（2008）01-0081-04
Thermal Analysis of Power SiGe Heterojunction Bipolar Transistor with Novel Segmented Multi-Emitter Structure
WANG Yang,ZHANG Wan-rong,XIE Hong-yun, JIN Dong-yue, QIU Jian-jun（School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, P. R. China）
Abstract:
An effective method for enhancing thermal stability of a multi-emitter power heterojunction bipolar transistor （HBT） was presented. A suitable thermal model, which includes various thermal resistances of different components, was built for the segmented multi-emitter HBT. Using this model, thermal simulation for a ten-finger power SiGe HBT with segmented emitter structure was conducted with ANSYS software. Considering the precision of the simulation and the restriction of ANSYS software, a two-step simulation method was proposed： 1） substrate simulation and 2） active region simulation. Three-dimensional temperature distribution on emitter fingers was obtained from simulation. Compared with non-segmented structure, the maximum junction temperature, thermal resistance of the power HBT with improved structure was significantly lower as expected, and the thermal stability was improved.[著者文摘]
Key words:
SiGe HBT; Segmented emitter structure; Thermal resistance model; Thermal simulation
基金资助:
国家自然科学基金资助项目（60376033）;北京市教委资助项目（KM200710005015）;北京工业大学第5届研究生科技基金资助项目（ykj-2006-282）;北京市属市管高等学校人才强教计划资助项目（102（KB）-00856）
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