学术
国际标准刊号：ISSN 0258-7076
国内统一刊号：CN 11-2111
摘 要:
采用直拉法生长4英寸〈100〉低位错锗单晶,研究了热场温度梯度、缩颈工艺、拉晶工艺参数对单晶位错密度的影响,测量了单晶位错密度,结果表明位错密度小于3000.cm^-2,满足空间GaAs/Ge太阳电池的使用要求。[著者文摘]
文章出处:
《稀有金属》-2008年32卷1期 -34-37页
Chinese Journal of Rare Metals
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
0258-7076（2008）01-0034-04
Growth of 4 Inch Low Dislocation Germanium Monocrystal
Feng Deshen;Li Nan;Su Xiaoping;Yang Hia;Min Zhendong （Beijing Guojing Infrared Optical Technology Co.Ltd.General Research Institute for Non-Ferrous Metals;Beijing 100188;China）
Abstract:
4 inch 〈100〉 germanium single crystal with low dislocation was grown by Czochralski method.In this work,the effects of temperature gradient,necking technique and technological parameters of crystal pulling on dislocation density were studied.The results showed that the dislocation density could be below 3000 pits·cm-2 and the crystal was conformed to the requirements of GaAs/Ge solar cells for space applications.[著者文摘]
Key words:
4 inch diameter germanium monocrystal;temperature gradient;dash;technological parameter;dislocation density
收稿日期: 2007-08-10
修订日期: 2007-09-20
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