学术
摘 要:
采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜,然后在950℃下流动的氨气中进行氨化反应制备GaN纳米棒.应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征.结果表明,采用此方法得到了六方纤锌矿结构的GaN单晶纳米棒.观察发现纳米棒表面光滑.并讨论了GaN纳米棒的生长机制.[著者文摘]
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文章出处:
《半导体学报》-2008年29卷2期 -210-213页
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
0253-4177（2008）02-0210-04
Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2 03/Co Films Deposited on Si （111） Substrates
Qin Lixia, Xue Chengshan, Zhuang Huizhao, Yang Zhaozhu, Chen Jinhua, and Li Hong （Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China）
Abstract:
GaN nanorods are successfully synthesized on Si（111） substrates with magnetron sputtering through ammoniating Ga2O3/Co films at 950℃. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy,and Fourier-transform infrared spectroscopy are used to characterize the samples. The results demonstrate that the nanorods are single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces. The growth mechanism of GaN nanorods is also discussed.[著者文摘]
Key words:
nanorods; crystal growth; scanning and transmission electron microscopy
基金资助:
国家自然科学基金资助项目（批准号：90201025,90301002）
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