学术
摘 要:
借助深能级瞬态傅里叶谱研究了钒离子注入在SiC中引入的深能级陷阱.掺入的钒在4 H-SiC中形成两个深受主能级,分别位于导带下0.81和1.02eV处,其电子俘获截面分别为7.0×10^-16和6.0×10^-16cm^2.对钒离子注入4 H-SiC样品进行低温光致发光测量,同样发现两个电子陷阱,分别位于导带下0.80和1.16eV处。结果表明,在n型4 H-SiC掺入杂质钒可以同时形成两个深的钒受主能级,分别位于导带下0.8±0.01和1.1±0.08eV处.[著者文摘]
文章出处:
《半导体学报》-2008年29卷2期 -240-243页
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
0253-4177（2008）02-0240-04
Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC
Wang Chao, Zhang Yimen, Zhang Yuming, Wang Yuehu, and Xu Daqing （Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Institute of Microelectronics , Xidian University, Xi ＇ an 710071, China）
Abstract:
Deep level transient Fourier spectroscopy （DLTFS） measurements are used to characterize the deep impurity levels in n-type 4H-SiC by vanadium ions implantation. Two acceptor levels of vanadium at Ec - 0.81 and Ec - 1.02eV with the electron capture cross section of 7.0 × 10^16 and 6.0 × 10^-16 cm^2 are observed, respectively. Low-temperature photoluminescence measurements in the range of 1.4-3.4eV are also performed on the sample, which reveals the formation of two electron traps at 0.80 and 1. 16eV below the conduction band. These traps indicate that vanadium doping leads to the formation of two deep acceptor levels in 4H-SiC,with the location of 0.8±0.01 and 1. 1 ±0.08eV below the conduction band.[著者文摘]
Key words:
4H-SiC; vanadium doping; acceptor level
基金资助:
国家自然科学基金（批准号：60376001）; 国家重点基础研究发展规划（批准号：2002CB311904）; 国防基础研究规划（批准号：51327020202）; 教育部重点计划（批准号：106150）资助项目
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