学术
摘 要:
介绍了一个200kHz信号带宽、用于低中频结构GSM射频接收机的高精度ΣΔ调制器.该调制器采用3阶单环单比特的结构,电路使用全差分开关电容结构实现,并在0.6μm2P2 M CMOS工艺下流片验证.调制器使用全差分±1 V参考电压,工作在26 MHz采样频率,过采样率为64 .测试结果表明,在200kHz信号带宽内,调制器达到80.6dB动态范围,峰值SNDR达到71.8dB,峰值SNR达到73.9dB.整个调制器电源电压为5 V,静态功耗为15 mW.[著者文摘]
文章出处:
《半导体学报》-2008年29卷2期 -256-261页
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
0253-4177（2008）02-0256-06
An 80dB Dynamic Range ε△ Modulator for Low-IF GSM Receivers
Yang Pei, Yin Xiumei, Yang Huazhong （Department of Electronic Engineering, Tsinghua University, Beijing 100084, China）
Abstract:
A high-resolution,200kHz signal bandwidth,third-order single-loop single-bit ε△ modulator used in low-IF GSM receivers is presented. The modulator is implemented with fully differential switched capacitor circuits in standard 0. 6μm 2P2M CMOS technology. The modulator uses two balanced reference voltages of ±1V,and is driven by a single 26MHz clock signal. The measurement results show that,with an oversampling ratio of 64, the modulator achieves an 80.6dB dynamic range,a 71.8dB peak SNDR,and a 73.9dB peak SNR in the signal bandwidth of 200kHz. The modulator dissipates 15mW static power from a single 5V supply.[著者文摘]
Key words:
sigma-delta modulator; analog-to-digital conversion; switched-capacitor; operational amplifiers
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