学术
摘 要:
介绍了一种为无源UHFRFID设计的高效高灵敏度电源产生电路.该电路基于0.18μm工艺,其中包含了两个电荷泵,一个参考电流源和一组偏置电路.由于其偏置电路消除了传统电路中的阈值损失和体效应,使该电路在低压下的电源转换性能得到很大的提高.要为100kΩ负载提供1.5V电源电压,所需最小输入电压为350mV,转换效率为22%.在负载为60kΩ时,最高可以获得29.8%的转换效率.仿真结果表明,新的电路结构比传统的电荷泵具有更优越的性能.[著者文摘]
文章出处:
《半导体学报》-2008年29卷2期 -293-297页
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
0253-4177（2008）02-0293-05
A Low-Voltage, High Efficiency Power Generation Structure for UHF RFID
Pang Zegui, Zhuang Yiqi, Li Xiaoming, and Li Jan （Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Institute ofMicroelectronics, Xidian University, Xi＇ an 710071, China）
Abstract:
This paper presents a new power generation structure that can provide DC energy for passive UHF RFID with high sensitivity and high efficiency. The structure is designed with 0.18μm standard CMOS technology, including two charge pumps,a current reference, and a group of bias circuits. Low-voltage performance is improved thanks to the bias structure,which eliminates the threshold voltage drop and body-effect of conventional circuits. A 350mV minimum input level is required to generate a 1.5V power supply for a 100k~ load with power conversion efficiency （PCE） of 22%. PCE up to 29.8% is achieved with a 60kΩ load. Simulation results show that the new circuit is superior to conventional charge pumps.[著者文摘]
Key words:
UHF RFID; power generation; charge pump; low voltage; CMOS
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