学术
UHV/CVD法生长硅基低位错密度厚锗外延层
周志文[1] 蔡志猛[1] 张永[1] 蔡坤煌[1] 周笔[1] 林桂江[1] 汪建元[1] 李成[1] 赖虹凯[1] 陈松岩[1] 余金中[2] 王启明[2]
[1]厦门大学物理系半导体光子学研究中心,厦门361005 [2]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083
摘 要:
采用超高真空化学气相淀积系统,以高纯Si2H6和GeH4作为生长气源,用低温缓冲层技术在Si（001）衬底上成功生长出厚的纯Ge外延层.对Si衬底上外延的纯Ge层用反射式高能电子衍射仪、原子力显微镜、X射线双晶衍射曲线和Ra-man谱进行了表征.结果表明在Si基上生长的约550nm厚的Ge外延层,表面粗糙度小于1nm,XRD双晶衍射曲线和Ra-man谱Ge-Ge模半高宽分别为530″和5.5cm^-1,具有良好的结晶质量.位错腐蚀结果显示线位错密度小于5×105cm^-2.可用于制备Si基长波长集成光电探测器和Si基高速电子器件.[著者文摘]
文章出处:
《半导体学报》-2008年29卷2期 -315-318页
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
0253-4177（2008）02-0315-04
Growth of Thick Ge Epitaxial Layers with Low,Dislocation Density on Silicon Substrate by UHV/CVD
Zhou Zhiwen , Cai Zhimeng, Zhang Yong, Cai Kunhuang, Zhou Bi, Lin Guijiang,Wang Jianyuan, Li Cheng, Lai Hongkai,Chen Songyan, Yu Jinzhong, Wang Qiming （1 Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China;2 State Key Laboratory of Integrated Optoelectronics , Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
Abstract:
Thick Ge epitaxial layers are grown on Si（001） substrates with low temperature buffer layers with ultra-high vacuum chemical vapor deposition systems using Si21-16 and GeH4 as precursors. The deposition process of.the Ge layer on Si is investigated in real time by reflection high-energy electron diffraction, and the quality of the Ge layer was evaluated by atomic force microscopy, double crystal X-ray diffraction （XRD）, and Raman measurement. The root-mean-square surface roughness of the Ge epilayer with a thickness of 550nm is less than 1nm and the full-width-at-half maximum of the Ge peak of the XRD profile and the Ge-Ge mode of the Raman spectra are about 530＂ and 5.5cm^-1, respectively. These measurements indicate that the Ge epitaxial layer is of good qual- ity. The etch pit density related to threading dislocations is less than 5 × 10s cm^-2 . This is a promising material for Si-based long wavelength photodetectors and electronic devices[著者文摘]
Key words:
Ge/Si heteroepitaxy; relaxed buffer; Ge
基金资助:
国家自然科学基金（批准号：60676027,50672079,60336010）;福建省重点科技项目（批准号：2006H0036）;教育部回国留学人员启动基金资助项目
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