学术
陷阱效应对4H-SiC MESFET温度特性的影响
吕红亮[1] 张义门[1] 张玉明[1] 车勇[2] 王悦湖[1]
[1]西安电子科技大学微电子学院,教育部宽禁带半导体重点实验室,西安710071 [2]武警工程学院军械运输系,西安710086
摘 要:
针对4H-SiC射频MESFET中的自热效应,建立了基于解析模型的材料参数温度模型和器件直流模型.研究了由陷阱造成的背栅效应,并结合材料的温度特性分析了温度升高对器件特性的影响.分析了陷阱对器件特性的影响,并进一步阐明了陷落-发射机制.计算得到陷阱能级为1.07eV,俘获截面为1×10-8cm^2,器件的自升温达到100K以上,能够较好地反映实验结果.分析结果表明,背栅电势随陷阱浓度的增大而增大,并随着漏极电压的增大而减小,在室温下达到～3V.另外,由于器件中存在自热效应,背栅电势随漏压的变化加剧.这些模拟分析对实际器件的设计及工艺制造提供了理论上的依据.[著者文摘]
文章出处:
《半导体学报》-2008年29卷2期 -334-337页
栏目信息:
分 类 号:
文献标识码:
A
文章编号:
0253-4177（2008）02-0334-04
Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs
Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Wang Yuehu （Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Microelectronics Institute, Xidian University, Xi＇an 710071, China;2 Department of Ordnance and Transportation, Engineering College of CAPF , Xi＇ an 710086, China）
Abstract:
Based on the DC model and the self-heating model of SiC MESFETs,the self-heating effect is investigated in detail. The back-gated effect and its influence on high temperature characteristics are studied. The simulation results show that the activation energy of the traps is 1.07eV with a capture cross section of 1 × 10^-8 cm^2 The back-gate potential increases as trap concentration increases,and it reaches - 3V at room temperature. As the drain voltage increases, the back-gate potential decreases.[著者文摘]
Key words:
The proposed model is valuable in the design of high-power and high-temperature applications.
基金资助:
国家自然科学基金（批准号：60606022）;应用材料创新基金（批准号：XA-AM-200702）资助项目
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