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Effect of active layer deposition temperature on the performance of sputtered amorphous In-Ga-Zn-O thin film transistors

《半导体学报:英文版》2014年 第1期 | 吴杰 施俊斐 董承远 邹忠飞 陈宇霆 周大祥 胡哲 詹润泽   Center for Opto-Electronic Materials and Devices National Engineering Lab of TFT-LCD Materials and Technologies Shanghai Jiao Tong University Shanghai 200240 China Infovision Optoelectronics (Kunshan) Co. Ltd Kunshan 215300 China
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摘 要:The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO(a-IGZO) thin film transistors(TFTs) is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as "optimized-annealed"are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150 C while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and O1s spectra apparently. Importantly, the variationoffieldeffectmobilityofa-IGZOTFTswithdepositiontemperaturedoesnotcoincidewiththetendencies in Hall mobility of a-IGZO thin films. Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature.
【分 类】【工业技术】 > 无线电电子学、电信技术 > 半导体技术 > 半导体三极管(晶体管) > 晶体管:按工艺分 > 薄膜晶体管【数理科学和化学】 > 物理学 > 固体物理学 > 薄膜物理学 > 薄膜的生长、结构和外延
【关键词】 薄膜晶体管 沉积温度 电性能 有源层 非晶 场效应迁移率 TFT器件 溅射
【出 处】 《半导体学报:英文版》2014年 第1期 34-39页 共6页
【收 录】 中文科技期刊数据库