学术
摘 要:
铁电薄膜材料、集成铁电器件以及与之相应的物理问题，引起物理学、材料科学与工程、微电子与光电子学等领域的科学技术人员和学者的关注。文章介绍了铁电薄膜新研究进展，对目前最常用的几种主要制备方法进行了评述，重点分析了铁电薄膜不同制备方法的优缺点。并对未来的可能进展作了简单的描述，指出了目前关于铁电薄膜研究中的一些问题，并提出一些解决问题的办法。[著者文摘]
文章出处:
《广东化工》-2008年35卷2期,34 -27-29,34页
栏目信息:
Preparation Technology and Application of Ferroelectric Thin Film
Guo Xuxia, Wang Jiangbo, Zhou Xiaoying （1. Mechanical and Electrical Engineering, Baoji University of Arts and Science, Baoji 721007; 2. Shanxi Fenghuo Communication Group Co., Ltd., Baoji 721006, China）
Abstract:
Ferroelectric thin films materials, integrated ferroelectric device and some physical questions correspond to these have been paid much attention by the scientists of physic science, material science, micro-electronics and photoelectron science. The research progress on ferroelectric thin film was introduced in the paper. Some main preparation technologies were summarized in detail at present. The advantages and disadvantage of different processing technology for ferroelectric thin films were discussed especially. In addition, possible future development were briefly summarized. Some important aspects and several problems in ferroelectric thin film were outlined, and the methods solving these problems was also pointed out.[著者文摘]
Key words:
integrated ferroelectric device; ferroelectric thin film; preparation technology; research progress
基金资助:
宝鸡文理学院中青年科研计划项目（ZK2563）
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