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Solid-State Electronics 中科院4区 JCR:Q4 SCIE EI CA PubMed JST
发文量 15,962
被引量 295,514
影响因子(2025版) 1.106

It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design with appropriate experimental backup; (2) optical, electrical, morphological characterization techniques and parameter extraction with experimental application to real devices; (3) device fabrication and synthesis, including device-related new materials growth, electro-optical characterization and performance evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) modeling and simulation of solid-state devices and processes with appropriate experimental backup; (6) nanoscale electronic and optoelectronic devices for various applications, including photovoltaics, sensing, micro- and nano-mechanical (MEMS/NEMS) systems, quantum computation and communication.

  • 主办单位: PERGAMON-ELSEVIER SCIENCE LTD
  • 出版地区: OXFORD
  • 出版周期: 月刊
  • 别名: SOLID STATE ELECTRON;Solid-State Electron.;SOLID-STATE ELECTRONICS;固态电子;Solid state electronics
  • 国际标准连续出版物号/电子版 ISSN 0038-1101 / EISSN 1879-2405
  • 创刊时间: 1960年
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2026年--期
共:1篇

    • Moran-Lazaro, Juan PabloCruz-Lopez, ElienaiPalafox-Corona, AldoNavarrete-Prieto, Diego Armando

2026年--期

2026年--期